https://ir.lib.vntu.edu.ua//handle/123456789/31059 статті, матеріали конференцій 2026-04-08T22:38:43Z https://ir.lib.vntu.edu.ua//handle/123456789/51002 Electrical properties of the nanocomposite (copper, samarium)-containing complex compound Semenov, A. O.; Martyniuk, V. V.; Evseeva, M. V.; Osadchuk, O. V.; Semenova, O. O.; Семенов, А. О.; Мартинюк, В. В.; Осадчук, О. В. A new semiconductor material tetrakis-µ3-(methoxo)(methanol)-pentakis (acetylacetonate)(tricopper(II), samarium(III)) (I) with composition [Cu3Sm(AA)5(OCH3)4CH3OH], HAA = H3C–C(O)–CH2–C(O)–CH3 has been synthesized. By the data of elemental analysis and physicochemical research methods, it was established that the obtained complex compound (I) contained atoms of copper (II) and samarium (III) in ratio Cu:Sm = 3:1, and its composition corresponded to the gross formula Cu3SmО15C30Н51. Electrical conductivity of the obtained material in pressed form was measured. For the complex compound (I) such parameters were calculated: the number of valence electrons in one molecule – 272; mass of one molecule – 164.867∙10-20 kg; the total number of molecules in the cylindrical sample of a 0.131 g mass and a 18.24∙10-9 m3 volume – 7.946∙1013moleculas; the total number of valence electrons – 272. In the 303~413 K temperature range, the resistivity of the pressed sample decreases 4∙1011 to 7∙104 Ohm∙cm, which confirms that the isolated compound is a semiconductor with a bandgap ΔE = 1.526 eV. Electrical conductivity properties of the complex compound as thermo- and magnetically sensitive element were studied, for this purpose a test sample of compressed material with 0.5×0.5×1.0 mm geometric dimensions was utilized. 2022-01-01T00:00:00Z https://ir.lib.vntu.edu.ua//handle/123456789/51001 Investigation of a radio-frequency temperature transducer with a thermosensitive resistive element based on a complex compound of heterometallic β-diketonate Osadchuk, О. V.; Osadchuk, V. S.; Osadchuk, I. O.; Semenov, A. O.; Martyniuk, V. V.; Prytula, M. O.; Осадчук, О. В.; Семенов, А. О.; Мартинюк, В. В.; Притула, М. О. The article considers a new electrical circuit of a microelectronicradio-frequency measuring temperature transducer with a thermosensitive resistive element based on a complex compound of heterometallicβ-diketonate.The main characteristics of the researched radio�frequency temperature transducer with a thermosensitive resistive element based on a complex compound of heterometallic β-diketonate are obtained: the dependences of the active and reactive components of the full impedance of the radio-frequency measuring temperature transducer, the conversion function and the sensitivity equation. 2022-01-01T00:00:00Z https://ir.lib.vntu.edu.ua//handle/123456789/51000 Сучасні CMOS сенсори температури Мартинюк, В. В.; Малюк, О. С.; Martyniuk, V.; Maliuk, O. The evolution of temperature sensing technologies has reached new heights with the integration of CMOS (Complementary MetalOxide-Semiconductor) technology. This article provides an in-depth review of the advancements in CMOS temperature sensors, focusing on their innovative design approaches and technological improvements. These sensors are crucial components in various applications such as automotive systems, healthcare devices, environmental monitoring, and consumer electronics, where precise temperature control is vital. CMOS temperature sensors have emerged as a response to the limitations of traditional sensors like thermocouples and thermistors. These conventional sensors often fail to meet the high precision, low power consumption, and compactness requirements demanded by modern applications. CMOS technology offers significant advantages, including miniaturization, low power consumption, and seamless integration with digital systems, making it an ideal choice for developing next-generation temperature sensors. This article explores the various architectural designs employed in CMOS temperature sensors, particularly emphasizing time-domain approaches. Unlike traditional voltage or current-based sensors, time-domain CMOS sensors operate by measuring parameters such as time delays or oscillation frequencies, which vary with temperature. This methodology not only enhances the accuracy of temperature measurements but also reduces the overall power consumption, making these sensors highly suitable for energy-constrained environments. The article classifies these sensors based on their temperature evaluation functions and discusses the various signal types used in time-domain sensing, such as frequency, period, and delay time. Additionally, the article delves into the integration of curvature compensation techniques in CMOS sensors. These techniques are essential for addressing the non-linear temperature characteristics inherent in semiconductor devices. By incorporating curvature compensation, CMOS temperature sensors can maintain high accuracy across a broad temperature range, which is critical for applications requiring reliable thermal management. The article presents detailed architectural designs and circuit implementations that include curvature compensation mechanisms, supported by experimental data and comparative analyses to demonstrate their effectiveness. Another critical aspect of CMOS temperature sensors covered in this article is the implementation of advanced calibration algorithms. Calibration is vital for ensuring the accuracy and reliability of temperature measurements over time. The article discusses multi-point calibration techniques and digital compensation strategies that help minimize measurement errors and improve sensor performance. In conclusion, this article offers a comprehensive review of the state-of-the-art in CMOS temperature sensors, covering their innovative designs, operational principles, and potential applications. It underscores the importance of continuous research and development in this field to meet the growing demands for high-performance temperature sensing solutions in today’s technologically advanced landscape. This review aims to provide valuable insights for researchers, engineers, and industry professionals engaged in the design and deployment of advanced temperature monitoring systems.; У статті представлено огляд сучасних досягнень у сфері CMOS-сенсорів температури. Розглянуто різні типи CMOS-сенсорів, що використовують сигнали в часовій області для підвищення точності та енергоефективності вимірювань. Представлено інноваційні рішення, такі як сенсори з вбудованою компенсацією кривизни та алгоритмами калібрування, що забезпечують високу точність навіть у широкому діапазоні температур. Детально описано архітектуру, принципові схеми та результати досліджень запропонованих сенсорів. Показано, що CMOS-технології є перспективними для реалізації високоточних і компактних температурних сенсорів завдяки їх мініатюрності, інтеграції з цифровими системами та низькій вартості виробництва. 2024-01-01T00:00:00Z https://ir.lib.vntu.edu.ua//handle/123456789/50999 Сенсори температури на базі CMOS Мартинюк, В. В.; Малюк, О. С.; Martyniuk, V.; Maliuk, O. The article provides an extensive exploration of the current landscape of CMOS temperature sensor technology, providing insights into various groundbreaking advancements. One notable innovation discussed is the integration of a phase-locked loop (PLL) architecture into temperature sensors, enabling the seamless transmission of temperature data to digital outputs within the frequency domain without the reliance on an external reference source. Furthermore, the article delves into the emergence of energy-efficient temperature sensors and CMOSbased temperature sensors that exploit the thermal dependencies of current flow, specifically optimized for application on a 65 nm scale. In addition to highlighting these technological advancements, the article conducts in-depth discussions on the technical characteristics, operational methodologies, and potential future developments of CMOS temperature sensors. The diverse range of applications across various industries, including but not limited to medical, automotive, and industrial automation sectors, is thoroughly explored, emphasizing the versatility and wide-ranging impact of these sensors. Furthermore, the article provides detailed analyses of the architectural designs, electrical schematic diagrams, and graphical research results associated with CMOS temperature sensors, offering valuable insights into their underlying mechanisms and performance metrics. A significant emphasis is placed on the significance of CMOS (Complementary Metal-Oxide-Semiconductor) technology as a key enabler of these sensor innovations. Recognized for its inherent advantages such as miniaturization, high integration capability, and costeffectiveness, CMOS technology stands out as a frontrunner in driving the realization of advanced sensor technologies across various domains. By offering a comprehensive exploration of these cutting-edge advancements, the article aims to contribute to the ongoing discourse surrounding CMOS temperature sensors and their transformative potential. It seeks to inform and inspire researchers, engineers, and industry professionals alike to further explore and harness the capabilities of CMOS technology for the advancement of temperature sensing solutions, thereby fostering innovation and progress in the field.; Запропоновано огляд сучасних досягнень у сфері CMOS-сенсорів температури: сенсор температури, що використовує архітектуру фазового замикання петлі (PLL) та має змогу передавати значення сенсора у цифровий вихід в частотному домені без використання вихідного джерела відліку; енергоефективний сенсор температури; CMOS сенсор температури, що базується на термічних залежностях протікання струмів і призначений для використання на вузлі 65 нм. Їх технічні характеристики, методи роботи та перспективи подальшого розвитку та сфери їх застосування. Подано їх архітектуру, електричні принципові схеми та графічні результати досліджень Показано, що технологія CMOS (Complementary Metal-Oxide-Semiconductor) являється однією з найбільш обіцяючих для реалізації таких сенсорів, завдяки своїй мініатюрності, високій інтеграції та низькій вартості виробництва. 2024-01-01T00:00:00Z