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Increasing radiation resistance of memory devices based on amorphous semiconductors
(Lublin University of Technology, 2020)
A memory cell structure is proposed that uses a Schottky barrier thin film transistor based on an amorphous semiconductor as a junction element, and a chalcogenide glassy semiconductor film as a switching element. A physical ...
Research on a magnetic field sensor with a frequency output signal based on a tunnel-resonance diode
(Lublin University of Technology, 2020)
Based on the consideration of physical processes in a tunnel-resonant diode under the action of a magnetic field, the construction of an autogenerating magnetic field sensor with a frequency output signal is proposed. The ...