Browsing by DOI "10.35784/iapgos.2081"

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    • Increasing radiation resistance of memory devices based on amorphous semiconductors 

      Кичак, В. М.; Kychak, V.; Slobodian, I.; Vovk, V.; Слободян, І. В.; Вовк, В. (Lublin University of Technology, 2020)
      A memory cell structure is proposed that uses a Schottky barrier thin film transistor based on an amorphous semiconductor as a junction element, and a chalcogenide glassy semiconductor film as a switching element. A physical ...