Temperature converter based on IGBT-BJT structure with negative resistance

Author
Osadchuk, O. V.
Baraban, S. V.
Basich, B. V.
Осадчук, О. В.
Барабан, С. В.
Басич, Б. В.
Date
2017
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Abstract
The paper analyses modern development status of temperature converter on the basis of piroelectrics, represents and describes a new temperature converter on the basis of transistor structure with negative resistance, simulates current-voltage and frequency characteristic of this device in the software environment Pspice.
URI:
http://ir.lib.vntu.edu.ua//handle/123456789/18309
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