Спосіб стабілізації частоти випромінювання інжекційного напівпровідникового лазера

Abstract

The proposed method for stabilizing frequency of an injection semiconductor laser implies controlling heat evolution in the active zone of the laser by varying the pumping current of the laser according to a linear or exponential characteristic and with positive current signal feedback. The method is distinctive by varying the frequency modulation depth of the pumping current pulses depending on the temperature of the laser crystal simultaneously with varying the amplitude of the current pulses.