Напівпровідниковий пристрій для виміру густини оптичної потужності

Abstract

Semiconductor device for measurement of density of optical power includes a source of direct voltage, the first and the second poles of the source of direct voltage are connected to common bus, at that there is included a bipolar transistor, two-gate MDS transistor, the third, fourth and fifth capacitors, passive inductivity, solar battery, varicap, at that the first output of the first capacitor is connected to the first output of the first resistor and the base of bipolar transistor, the second output of the first resistor if connected to the second output of passive inductivity, first output of the second capacitor and first pole of source of direct voltage, at that the sink of two-gate MDS transistor is connected to emitter of the bi-polar transistor.