Деформаційні ефекти у напівпровідникових структурах

Abstract

his paper deals with the influence of deformation effects on electrophysical parameters of semiconductors, including silicon. Application frequency signal as informative parameters of primary transducers including pressure transducers, accompanied by high noise immunity transfer, simplicity and a high degree of conversion to digital code, ease of switching in multi­information­measuring systems Bipolar and field effect transistors act as a strain­sensing element in pressure sensors , so you need more detail to determine the dependence of electrophysical characteristics of semiconductor material of pressure because it is the foundation upon which generated strain­sensing element . Strain dependence of semiconductors serve as a foundation for further development of the mathematical model of pressure transducers with a frequency output signal , based on which we can determine the dependence of current­voltage characteristics of the active and reactive components of the impedance transducer oscillation frequency and sensitivity of the pressure equation . It is shown that at low pressures, changing the electrophysical parameters of the semiconductor is due to changes in carrier mobility , and at high pressures ­ change the width of the gap. Formulas carrier mobility, concentration of essential and non­ carriers, the band gap of the pressure changes