Теплові ефекти при взаємодії потужного лазерного випромінювання з поверхнею напівпровідникових матеріалів

Abstract

The process of warming-up of surface of solid a few laser beams formative on his surface one and two-dimensional interference pattern is investigated. It is shown that by means of intensive laser radiation it is possible to produce` the surface structures of semiconductors. It is set that femtosecond laser pulse it is possible effectively to heat of crystalline silicon laser in thick to 20 µm.