Дослідження фоточутливих пристроїв на основі квантових ям

Abstract

In the master's qualification work the quantum method of modeling of field nanotransistors on a superfine (1–5nm) layer of silicon is considered. The effect of interference in the longitudinal motion of carriers in a short (5–50 nm) channel of a field–effect transistor is investigated, the influence of oxide charging on the characteristics of a transistor with a thin layer of silicon and a small equivalent thickness of the gate dielectric is investigated. Quantum mechanical calculation of such scattering is performed, high degrees (4–6) dependence of the intensity of such scattering on the thickness of the layer are obtained. It is shown that the conditions when the channel length is much more than the thickness of the silicon layer are optimal for the characteristics of the transistor. The effect of gate material and gate dielectric on the characteristics of the transistor is investigated. Calculations on the efficiency of the device showed that its introduction into production is cost effective. Since the Current is <3 ... 5 years, it is advisable to fund this scientific study of photosensitive devices based on quantum wells. When introduced into production, the manufacturer will profit. Analyzing the market we can count on a significant demand for our product. Confirmation of this is the technical parameters of this device, which are better than the parameters of the analogue. In the section labor protection covered such issues as safety in emergency situations, such as technical solutions for occupational hygiene and industrial sanitation, determination of safe distance for optical radiation, technical solutions for industrial and fire safety in the study of the radiometric parametric transducer of optical radiation, safety in emergency .