Дослідження генератора електричних коливань на основі тунельно-резонансного діода

Abstract

Based on the full equivalent circuit of the tunnel resonance diode, which takes into account its capacitive and inductive properties, a second-order differential equation is described that describes the physical processes in the oscillatory system of the generator. The solution of the equation made it possible to obtain the analytical dependence of the output alternating voltage of the generator on time, as well as the conditions for stable sinusoidal oscillations in the system. The dependence of the resonant frequency on the parameters of the circuit and power modes, as well as the analytical dependence of the frequency at which energy losses due to negative differential resistance in the oscillator system are completely compensated, are determined. It is shown that the resonant frequency of the generator varies in the region of negative differential resistance from 12·109 Hz to 1.8·109 Hz, which is explained by the combined influence of changes in negative differential resistance, intrinsic capacitance, and inductance of the tunnel resonance diode. The use of devices with negative differential resistance can significantly simplify the design of generators of electrical oscillations in the entire range of radio frequencies. Moreover, on the basis of a specific circuitry solution, depending on the operating modes, it is possible to implement both harmonic oscillation generators and special-shape pulse oscillators. The study of the characteristics of microwave generators based on tunnel resonance diodes is based on an equivalent circuit, it does not completely take into account the inductive component of the diode, although this component exists under any operating conditions, since the current that flows through the device is always delayed in relation to the voltage that caused it, which corresponds to the inductive reaction of the tunnel resonance diode. The electric oscillation generator is based on a tunnel resonance diode, the currentvoltage characteristic of which has a complex section corresponding to the existence of differential negative resistance in this section. The descending section occurs due to a decrease in the current passing through the double-barrier quantum heterostructure, due to a decrease in the transparency coefficient of potential barriers, due to an increase in the electron energy with an increase in the applied voltage compared to the energy resonance level.