Визначення питомого опору запам’ятовуючого пристрою на базі халькогенідних склоподібних напівпровідників

Abstract

To build storage devices based on chalcogenide glassy semiconductors (CGS) used physical effect switching. The essence of this effect is to change the nature of conductivity, which occurs when changing electric field. With the gradual increase of the electric field to a certain threshold E0 current increases almost linearly. If E0 is a reduction of tension to some value Evmk a relatively small change in value of current, and a sharp increase in the value of current at E0> Evmk. Mode in which the current increases linearly, called mode "off", and the regime a sharp rise in current at E0> Evmk - mode "enabled." Thus the current-voltage characteristic S-shaped turns. If you change the polarity of the voltage characteristics of this kind is repeated. That is, we can assume that the current-voltage characteristic of CGS in appearance follows CVC symmetrical thyristor, that is a negative differential conductivity on the line as well as on the back of a branch of the CVC. It is known that the growth of the electric field at E0> Evmk, there lacing current. It is believed that the switching effect of CGS refers to an electronic sector, although thermal effects play a role. In many thin layers of CGS during a long stay in a state of "enabled" is remembering and to return the pattern to its original state, you must use pulses of large amplitude. On the other hand is not very long stay in a state of "turned on" switch turns reverse process; turn off of the electric field returns the pattern to its original state.