Оптоелектронний генератор

Abstract

An optoelectronic generator comprises bipolar and field-effect transistors, two photoresistive optical coupler and fife resistors. Source of the field-effect transistor is connected with the first power bus. To power bus through the first resistor it is connected gate of field-effect transistor and by means of photoresistor of the first photoresistive optical coupler it is connected the first terminal of the second resistor and base of bipolar transistor, which emitter is connected to the second power bus. To circuit that connects collector of bipolar transistor with the first power bus it is connected the third resistor. LED of the first and the second photoresistive optical coupler are connected in series with the third resistor in collector circuit of bipolar transistor in forward direction relatively the power source. LED of the second photoresistive optical coupler is connected between the second power and gate of field-effect transistor, drain of which is connected to base of bipolar transistor through of the fourth resistor. The second terminal of the second resistor is connected with the second power bus. The fifth resistor is realized connected in parallel to LED of photoresistive optical coupler. The fifth resistor is realized as resistor with variable resistance. In the optoelectronic generator it is introduced the second bipolar transistor, the sixth resistor and individual LED being high-brightness LED, optical output of which is optical output of the generator. Base of the second bipolar transistor is connected to collector circuit of the first transistor. Emitter of the second bipolar transistor is connected to the second power bus, its collector –to the second output of the sixth resistor and being electrical output of the optoelectronic generator. The first terminal of the sixth resistor is connected to cathode of individual LED, anode of it is connected to the first power bus.