Аналіз швидкодії елемента пам’яті на базі ХСН

Abstract

In the study analytically proved that the switching of memory cell which based on amorphous semiconductor, in the storage state can be seen as a gradual growing a conductive channel from the anode to the cathode. The memory condition occurs when the conductive channel reaches the cathode electrode. If growth in the length of the channel polarity of the applied voltage is changed, then the "new" anode starts to grow new channel in the opposite direction. The growth rate of the channel depends on the composition of amorphous semiconductor and ranges within 10^(-2) – 10^2 cm / sec.