Підходи та вимоги до моделювання структури напівпровідникового шару сонячного елемента

Abstract

The existing models of the solar cell are considered and analyzed. It was established that the existing models investigate: the dependence of the normalized current density on the voltage when the thickness of the photoelectric layer of the photoelectric converter, photoelectric characteristics of the photoelectric converter depending on the temperature coefficient and different light conditions. The models show that with an increase in temperature, the value of the value of the utility coefficient, current, the fill coefficient of the volt-amperage characteristic is reduced.The analysis of models showed that a calculation over of basic electrophysics parameters (current of short circuit, tension of idling) was brought without the account of changes of size of area active to the perceiving surface of relief of semiconductor layer of photo-electric transformer. It substantially influences on the calculation of size of initial power and output-input ratio, and also the volt-ampere и volt of wadding reduces exactness and stability descriptions of sunny element. For the calculation of size of the real area of perceiving surface of semiconductor layer of photo-electric transformer, it offers to use the changes of properties of underlying structure of semiconductor layer of photo-electric transformer. A study of model of sunny photo-electric transformer is undertaken taking into account the general geometrical area of superficial semiconductor layer of photo-electric transformer. For research of influence of properties of the real perceiving surface on the initial parameters of photo-electric transformer, it offered to use a model a general geometrical area is taken into account in that. On results the design of photo-electric transformer by means of the program MathCAD, built by a volt-ampere descriptions of photo-electric transformer with a geometrical area and with the real areas of surface of photo-electric transformer. It is educed, that curves of volt-ampere description for the real areas of perceiving surface, differ from a curve for a geometrical topological area.It is proposed to calculate the area of the active receiving surface of the relief of the semiconductor layer of a photoelectric converter, based on the simulation of processes in the structure of the semiconductor layer of a photoelectric converter.