Квантово-механічні ефекти в напівпровідникових структурах та їх вплив на властивості електронних приладів

Abstract

In the article, the main quantum mechanical effects manifested in semiconductor structures of nanometer scale are considered. It is shown that with the reduction of the geometric dimensions of electronic components, classical models of charge carrier motion become insufficient, and quantum phenomena significantly affect the electrophysical characteristics of devices. The role of tunneling effect, quantum confinement and discrete energy levels in modern semiconductor devices is analyzed.