Радіовимірювальні сенсори магнітного поля на основі транзисторних структур з від’ємним опором

Abstract

This paper considers theoretical methods of analysis of radio magnetic field sensors based on transistor structures with negative resistance. In the first chapter conducted a feasibility study of development. The analysis of the problems which arose at the present stage of development of science and decided what to do to achieve this goal. Based on three mathematical models converters (with field and bipolar transistors, with bipolar and field-effect transistors and dvozatvornym field and bipolar transistors) sets maximum sensitivity converter based sensors Hall (divergence of theoretical and experimental research is ± 5%.) And dependence of generation frequency of the magnetic field. Established the model dvozatvornym converter with bipolar and field-effect transistors with the highest sensitivity lying in diapazoni 1 mT to 60 mT and is 100 - 800 Hz / mT. The fourth sectiondescribesrecommendations forhealth and safetyat work withthis unitand calculation'exposureinthe corneaof the eye-momu of directlaserirradiation. The fifth sectionestimatesthe calculation ofunitproduction costsand efficiencyof investment.