Сенсор магнітного поля на базі магніторезистора й елемента Холла

Abstract

A magnetic sensor based on a magnetoresistor and a hall element comprises a magnetoresistor, a DC source, a resistor, a global bus and two output terminals, the second lead of first resistor is connected to the first terminal of first magnetoresistor, the second pole of DC source is connected to the global bus, the second terminal is also connected to the global bus. A bipolar double-collector transistor, a field-effect double drain transistor, a bipolar transistor, a hall element, six resistors and two capacitors are introduced.