Оцінювання впливу температури на порогову напругу комірки пам’яті на базі аморфних напівпровідників

Abstract

This paper describes the research of dependence threshold voltage of the memory cell to the temperature when the mean free path of the charge carriers (holes) limited their traps' interception . Also assessed value capture cross section of holes. The mathematical formula for calculating the dependencies are described. Research of dependence of carriers capture cross section on temperature shows that its value depends on the spectral density of traps capture and with growth temperature - decreases. The threshold voltage decreases with increasing temperature and this dependence is exponential in nature.