Мікроелектронний вимірювач тиску

Abstract

A microelectronic pressure sensor comprises a DC source, a capacitor, two resistors, a global bus, two output terminals; the following elements are incorporated: a two-drain strain-sensitive field-effect transistor, a two-gate field-effect transistor, a second DC voltage source, an inductance; a first drain of two-drain strain-sensitive field-effect transistor forms a first output terminal, a second drain of two-drain strain-sensitive field-effect transistor is connected to the first lead of second resistor, a substrate of two-drain strain-sensitive field-effect transistor is connected to drain thereof, the second poles of first and second DC sources are united in the global bus being grounded, the gate of two-drain strain-sensitive field-effect transistor is connected to the first terminal of first resistor, the second lead of which is connected to the first pole of first DC voltage source. The substrate of two-gate field-effect transistor is connected to the drain thereof and drain of two-drain strain-sensitive field-effect transistor. The first gate of two-gate field-effect transistor is connected to the first drain of two-drain strain-sensitive field-effect transistor and first lead of inductance, the second lead of which is connected to the first lead of capacitor and first pole of second DC voltage source, the second gate of two-gate field-effect transistor is connected to the second drain of two-drain strain-sensitive field-effect transistor and first lead of second resistor, the second lead of which is connected to the drain of two-gate field-effect transistor, second lead of capacitor and connected to the global bus, the second output terminal is also connected to the global bus.