Радіовимірювальні прилади на основі оптичних перетворювачів з частотним виходом

Abstract

The thesis is devoted to the development radiomeasuring devices on the basis of optical transducers with frequency output by using of semiconductor structures with negative resistance, the principle of which operation is based on the functional connection of reactive properties of transistor structures with negative resistance, which enables creation and development competitive is models of this production. In the thesis the theoretical approaches for creation of radiomeasuring devices on the basis of optical transducers as bipolar and MOSfet transistor structures are designed on the basis of the solution of a Kirgoff equation, fundamental points of the theory of complex variable, that has enabled to receive dependences of an active and reactive components of complete resistance, conversion function, and equation of sensitivity from exposure of optical power and is proved, that these dependences are essential for creation of the radiomeasuring devices on the basis of optical transducers with hypersensitivity. Mathematical models are improved, in which the optical power to elements of nonlinear equivalent circuits of transducers is taken into account on the basis of two MOSfets, bipolar and FET, bipolar and MOSfet transistor structures with negative resistance, which are described by set of equations, on the basis of which the conversion function and equation of sensitivity are defined.