Визначення параметрів фізичної моделі двозатворного польового транзистора Шоткі

Abstract

The paper considers the method intended for determination of equivalent circuit parameters of active region of single-gate MESFET (MESFET1) crystal. The method is based on the results of measurement of maximal steady amplification factor at different schemes of its turning on, enabling to decrease the influence of part of case elements and passive area of the crystal.