| dc.contributor.author | Osadchuk, A. V. | en |
| dc.contributor.author | Osadchuk, I. A. | en |
| dc.contributor.author | Осадчук, О. В. | uk |
| dc.date.accessioned | 2017-01-14T20:46:51Z | |
| dc.date.available | 2017-01-14T20:46:51Z | |
| dc.date.issued | 2015 | |
| dc.identifier.citation | Osadchuk A. V. Radiomeasuring Transducer of the Pressure on the Basis of Reactive Properties of Transistor Structure with Negative Resistance [Electronic resource] / A. V. Osadchuk, I. A. Osadchuk // Proceedings of the International Siberian Conference on Control and Communications (SIBCON), Russia, Omsk, May 21−23, 2015. – Omsk : Siberian Federal University. 2015. - Access mode : http://ieeexplore.ieee.org/document/7147168/. | en |
| dc.identifier.uri | http://ir.lib.vntu.edu.ua/handle/123456789/13636 | |
| dc.description.abstract | The opportunity of direct transformation of pressure in frequency is shown on the basis of the hybrid integrated circuit consisting of the two-collector tenzosensitive transistor and the field two-gate transistor with an active inductive element on the basis of the bipolar transistor with a phase-shifting RC chain. Analytical dependencies of transformation function and the equation of sensitivity are received. Theoretical and experimental researches have shown, that sensitivity of the transducer makes 1,55-1,10 kHz /kPa. | en |
| dc.language.iso | en | en |
| dc.publisher | Томская группа и студенческое отделение Института инженеров по электротехнике и радиоэлектронике ;
Сибирский федеральный университет | ru |
| dc.subject | transducer of the pressure | en |
| dc.subject | frequency | en |
| dc.subject | negative resistance | en |
| dc.subject | reactive properties | en |
| dc.subject | pressure | en |
| dc.title | Radiomeasuring transducer of the pressure on the basis of reactive properties of transistor structure with negative resistance | en |
| dc.type | Thesis | |
