The generator of superhigh frequencies on the basis silicon germanium heterojunction bipolar transistors

dc.contributor.author	Osadchuk, V. S.	en
dc.contributor.author	Osadchuk, O. V.	en
dc.contributor.author	Osadchuk, Y. O.	en
dc.contributor.author	Осадчук, В. С.	uk
dc.contributor.author	Осадчук, О. В.	uk
dc.date.accessioned	2017-01-14T20:50:52Z
dc.date.available	2017-01-14T20:50:52Z
dc.date.issued	2016
dc.identifier.citation	Osadchuk V. S. The generator of superhigh frequencies on the basis silicon germanium heterojunction bipolar transistors [Text] / V. S. Osadchuk, O. V. Osadchuk, Y. O. Osadchuk // Proceedings of the XIIIth International Conference TCSET-2016 "Modern problems of radio engineering telecommunications and computer science", Lviv-Slavsko, February 23 – 26, 2016. – 2016. - P. 336-338.	en
dc.identifier.uri	http://ir.lib.vntu.edu.ua/handle/123456789/13637
dc.description.abstract	investigations of the hyperfrequency generator presented on the basis of the transistor structure consisting from two silicon - germanium heterojunction of bipolar transistors. The opportunity of electrical adjustment of an oscillation frequency is shown.	en
dc.language.iso	en	en
dc.publisher	Lviv-Slavsko	en
dc.subject	negative resistance	en
dc.subject	oscillator	en
dc.subject	SiGe HBT	en
dc.title	The generator of superhigh frequencies on the basis silicon germanium heterojunction bipolar transistors	en
dc.type	Article