Using The Thermal-Field Measurements To Evaluation The Parameters Of The MC Based On AS.

Author
Kychak, V. M.
Slobodyan, I. V.
Кичак, В. М.
Слободян, І. В.
Date
2012
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Abstract
In this paper the thermal –field measurements for evaluating the parameters of the memory cell (MC) based on amorphous semiconductor (AS) are used for the analysis of the temperature dependence of differential electrical conductivity of memory cell.
URI:
http://ir.lib.vntu.edu.ua/handle/123456789/15213
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