Показати скорочену інформацію

dc.contributor.authorOsadchuk, V. S.en
dc.contributor.authorOsadchuk, O. V.en
dc.contributor.authorZhahlovska, O. M.en
dc.contributor.authorLuganskaya, S.en
dc.contributor.authorKociubiński, A.en
dc.contributor.authorОсадчук, О. В.uk
dc.contributor.authorОсадчук, В. С.uk
dc.contributor.authorЖагловська, О. М.uk
dc.date.accessioned2021-11-15T11:05:33Z
dc.date.available2021-11-15T11:05:33Z
dc.date.issued2018
dc.identifier.citationDevelopment of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making [Electronic resource] / V. S. Osadchuk, O. V. Osadchuk, O. M. Zhahlovska [etc.] // Proc. SPIE Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018,1 October 2018. – Poland, 2018. – Vol. 10808/ – № 108080R. – Access mode: https://doi.org/10.1117/12.2501552.en
dc.identifier.citationOsadchuk V. S., Osadchuk O. V., Zhahlovska O. M., Luganskaya S., Kociubiński A. Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making. Proc. SPIE Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, Vol. 10808, № 108080R, 1 October 2018. Poland, 2018. URI: https://doi.org/10.1117/12.2501552.en
dc.identifier.issn0277-786X
dc.identifier.urihttp://ir.lib.vntu.edu.ua//handle/123456789/34016
dc.description.abstractIn the article the physical mechanism of optical radiation co-operation with semiconductor devices, technological route of making of MOS - phototransistor with bilateral illumination of channel has been considered. Also the optical transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and MOSFET with bilateral illumination of channel that is a photosensitive element has been considered. A mathematical model of the radio measuring optical transducer has been developed.en
dc.language.isoenen
dc.publisherSociety of Photo-Optical Instrumentation Engineersen
dc.relation.ispartofProc. SPIE Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, Vol. 10808, № 108080R, 1 October 2018.en
dc.relation.urihttps://doi.org/10.1117/12.2501552
dc.subjectfrequency optical transduceren
dc.subjectphototransistoren
dc.subjectnegative resistanceen
dc.titleDevelopment of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its makingen
dc.typeArticle
dc.identifier.doihttps://doi.org/10.1117/12.2501552


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Показати скорочену інформацію