Показати скорочену інформацію

dc.contributor.authorOsadchuk, O. V.en
dc.contributor.authorOsadchuk, I. O.en
dc.contributor.authorSuleimenov, B.en
dc.contributor.authorZyska, T.en
dc.contributor.authorArman, A.en
dc.contributor.authorTleshova, A.en
dc.contributor.authorGrądz, Ż.en
dc.contributor.authorОсадчук, О. В.uk
dc.contributor.authorОсадчук, Я. О.uk
dc.date.accessioned2021-11-16T09:03:17Z
dc.date.available2021-11-16T09:03:17Z
dc.date.issued2017
dc.identifier.citationFrequency pressure transducer with a sensitivity of mem capacitor on the basis of transistor structure with negative resistance [Electronic resource] / O. V. Osadchuk, I. O. Osadchuk, B. Suleimenov [et al.] // Proc. SPIE Photonics Applications in Astronomy, Communications, Industry, and High Energy Physics Experiments 2017, Vol. 10445, № 1044559, 7 August 2017. – Poland, 2017. – Access mode: https://doi.org/10.1117/12.2280958.en
dc.identifier.issn0277-786X
dc.identifier.urihttp://ir.lib.vntu.edu.ua//handle/123456789/34064
dc.description.abstractIn the article the pressure transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and tenso sensitive MEMS capacitor has been considered. A mathematical model of the frequency pressure transducer in dynamic regime has been developed that allowed to determine the voltage or current in the circuit at any given moment in time when acting this pressure. Analytical expressions of the conversion function and sensitivity equation has been received. The sensitivity of the developed device is between 0,95kHz/kPa to 1,65kHz/kPa.en
dc.language.isoenen
dc.publisherSociety of Photo-Optical Instrumentation Engineersen
dc.relation.ispartofProc. SPIE Photonics Applications in Astronomy, Communications, Industry, and High Energy Physics Experiments 2017, Vol. 10445, № 1044559, 7 August 2017.en
dc.relation.urihttps://doi.org/10.1117/12.2280958
dc.subjectfrequency pressure transduceren
dc.subjectMEMS capacitoren
dc.subjectnegative resistanceen
dc.titleFrequency pressure transducer with a sensitivity of mem capacitor on the basis of transistor structure with negative resistanceen
dc.typeArticle
dc.identifier.doi10.1117/12.2280958.


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Показати скорочену інформацію