Вдосконалення методу контролю біполярних транзисторів за рівнем власних шумів

Abstract

В даній роботі проводиться аналіз шумових характеристик біполярних транзисторів в області середніх частот з метою розширення можливостей методу вхідного та вихідного контролю за рівнем власних шумів.

Determination of noise descriptions can give certain state information electronic good. For example electronic wares, that used in high-quality to the receiving-transmission must have an radio electronic wares as possible a lower coefficient of own noises. The analysis of noise descriptions of bipolar transistor it is done in this work. Researches are conducted in the area of mid-frequencies. It enables to extend functionality of method of entrance and initial control after the level of own noises. For the estimation of informing parameter is expedient to define conditional the limit of division of low-frequency and mid-frequency sources of noise. The division of frequency range of noises is executed by maximum frequency . Such point is on Fig. 1. It can be defined at implementation of equalization (1). Thus on the stage of technological control after the level of low frequency noise it is possible to conduct additional control in the area of mid-frequencies for bipolar transistor, which be-gins on limit level. also there is possibility to select hi-rel electronic wares with the low level of own noises.