| dc.contributor.author | Kychak, V. M. | en |
| dc.contributor.author | Slobodyan, I. V. | en |
| dc.contributor.author | Кичак, В. М. | uk |
| dc.contributor.author | Слободян, І. В. | uk |
| dc.date.accessioned | 2017-04-12T08:31:18Z | |
| dc.date.available | 2017-04-12T08:31:18Z | |
| dc.date.issued | 2012 | |
| dc.identifier.citation | Kychak V. M. Using The Thermal-Field Measurements To Evaluation The Parameters Of The MC Based On AS [Text] / V. M. Kychak, I. V. Slobodyan // Proceeding of the XI-th International Conference "Modern problems of radio engineering , telecommunication and computer science (TCSET`2012), Ukraine, Lviv- Slavske, February 21-24, 2012. – 2012. – P. 153-154. | en |
| dc.identifier.uri | http://ir.lib.vntu.edu.ua/handle/123456789/15213 | |
| dc.description.abstract | In this paper the thermal –field measurements for evaluating the parameters of the memory cell (MC) based on amorphous semiconductor (AS) are used for the analysis of the temperature dependence of differential electrical conductivity of memory cell. | en |
| dc.language.iso | en | en |
| dc.publisher | Національний університет "Львівська політехніка" | uk |
| dc.relation.ispartof | Proceeding of the XI-th International Conference "Modern problems of radio engineering , telecommunication and computer science (TCSET`2012), Ukraine, Lviv- Slavske, February 21-24, 2012 : 153-154. | en |
| dc.subject | amprphous semiconductor | en |
| dc.subject | memory cell | en |
| dc.subject | electrical conductivity | en |
| dc.title | Using The Thermal-Field Measurements To Evaluation The Parameters Of The MC Based On AS. | en |
| dc.type | Thesis | |
