Показати скорочену інформацію

dc.contributor.authorOsadchuk, V. S.en
dc.contributor.authorOsadchuk, O. V.en
dc.contributor.authorBaraban, S. V.en
dc.contributor.authorZyska, T.en
dc.contributor.authorZhanpeisova, A.en
dc.contributor.authorОсадчук, В. С.uk
dc.contributor.authorОсадчук, О. В.uk
dc.contributor.authorБарабан, С. В.uk
dc.date.accessioned2021-11-16T08:45:21Z
dc.date.available2021-11-16T08:45:21Z
dc.date.issued2018
dc.identifier.citationTemperature transducer based on metal-pyroelectric-semiconductor structure with negative differential resistance [Electronic resource] / A. V. Osadchuk, V. S. Osadchuk, S. V. Baraban [et al.] // Proceedings of SPIE Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, Vol. 10808, № 108085D, 1 October 2018. – Poland, 2018. – Access mode: https://doi.org/10.1117/12.2501625.en
dc.identifier.urihttp://ir.lib.vntu.edu.ua//handle/123456789/34059
dc.description.abstractThe paper analyses modern development status of temperature transducer on the basis of piroelectrics, represents and describes a new temperature transducer on the basis of transistor structure with negative differential resistance, simulates current-voltage and frequency characteristic of this device in the software environment Pspice.en
dc.language.isoenen
dc.publisherSociety of Photo-Optical Instrumentation Engineersen
dc.relation.ispartofProceedings of SPIE Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, Vol. 10808, № 108085D, 1 October 2018en
dc.relation.urihttps://doi.org/10.1117/12.2501625
dc.subjectmetal-pyroelectric-semiconductor structureen
dc.subjectpiroelectricen
dc.subjecttemperature transduceren
dc.subjecttransistor structure with negative differential resistanceen
dc.subjectemanation power transducer sensoren
dc.subjectpiroelectric detectoren
dc.titleTemperature transducer based on metal-pyroelectric-semiconductor structure with negative differential resistanceen
dc.typeArticle
dc.identifier.doihttps://doi.org/10.1117/12.2501625


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Показати скорочену інформацію