Тензореактивний ефект у польових транзисторах

Abstract

The article presents the development and research of elements of the theory of the tenzoreactive effect in field tenzo-sensitive transistors. Mathematical models of the tenzoreactive effect have been developed, which differ from the existing ones in that they take into account the effect of pressure on the active and reactive components of the impedance of the tenzo-sensitive field-effect transistors, which determine the dependence of the generation frequency of the radiomeasuring frequency transducers on the effect of pressure. Theoretical and experimental studies showed that the active component of the field-effect transistor impedance changes by 8.86 Ohm/105 Pa, and the reactive component of the impedance changes by 8.52 Ohm/105 Pa with a pressure change of 2.5•105Pa. The obtained changes in the impedance from the action of pressure are significant enough to use field-effect transistors as primary tenzo-sensitive elements in radiomeasuring frequency pressure transducers. As a result of mathematical modeling, analytical expressions are obtained that can be used for the engineering calculation of the conversion function, the sensitivity equation, and other characteristics of the radiomeasuring frequency pressure transducers based on field-effect transistors.