Фотореактивний ефект в МДН-транзисторних структурах з двостороннім освітлення каналу

Abstract

The analysis of photoreactive effect in the field-effect transistor structures with bilateral illumination of the channel on the basis of the solution of equation of continuity of charge transmitters in the channel of transistor under the influence of light is conducted. It enabled the possibility to calculate in theoretically complete resistance of the channel and obtain analytical dependence of its constituents on power of optical radiation.