Математична модель комірки пам’яті на базі халькогенідних склоподібних напівпровідників

Abstract

It is shown, that expressions, which used for determination of static electro-conductivity and its depending on temperature for case when travel of carriers of charge take place on localized states, keep from describe real volt-ampere characteristic of memory elements based on chalcogenide glassy semiconductor. It is obtained the expression for volt-ampere characteristic for case when conductivity condition on great advance between localized states, similarly to processes in much alloyed crystalline semiconductors for case of doped conductivity. The extremums of volt-ampere characteristic of the memory cell based on chalcogenide glassy semiconductor is investigated.