Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making
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In the article the physical mechanism of optical radiation co-operation with semiconductor devices, technological route of making of MOS - phototransistor with bilateral illumination of channel has been considered. Also the optical transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and MOSFET with bilateral illumination of channel that is a photosensitive element has been considered. A mathematical model of the radio measuring optical transducer has been developed.
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Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making [Electronic resource] / V. S. Osadchuk, O. V. Osadchuk, O. M. Zhahlovska [etc.] // Proc. SPIE Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018,1 October 2018. – Poland, 2018. – Vol. 10808/ – № 108080R. – Access mode: https://doi.org/10.1117/12.2501552.
Osadchuk V. S., Osadchuk O. V., Zhahlovska O. M., Luganskaya S., Kociubiński A. Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making. Proc. SPIE Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, Vol. 10808, № 108080R, 1 October 2018. Poland, 2018. URI: https://doi.org/10.1117/12.2501552.
Osadchuk V. S., Osadchuk O. V., Zhahlovska O. M., Luganskaya S., Kociubiński A. Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making. Proc. SPIE Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, Vol. 10808, № 108080R, 1 October 2018. Poland, 2018. URI: https://doi.org/10.1117/12.2501552.