Мікроелектронний вимірювач магнітної індукції

Abstract

The proposed microelectronic magnetic flux density meter contains three magnetosensitive field-effect transistors, two resistors, two capacitors, and two direct voltage sources. The first terminal of the first direct voltage source is connected to the first terminal of the first resistor. The second terminal of the first resistor is connected to the gate of the first transistor. The drain of the first transistor is connected to the gate and the source of the third transistor. The second terminal of the second resistor is connected to the drain of the third transistor, the first terminal of the second capacitor, and the first terminal of the second direct voltage source. The gate of the third transistor is connected to the drain of the first transistor and the gate of the second transistor.