Пристрій для визначення товщини епітаксіальних шарів в напівпровідниках

Abstract

A device for the determination of thickness of epitaxial layers in semiconductors includes a light source and epitaxial layer that are connected to each other in sequence. Additionally it comprises a unit for signal processing and indication, microelectronic frequency converter, which includes a photo-resistor, first and second resistors, first and second field transistors, bipolar transistor, first and second capacitors and DC power source.