Сенсор магнітного поля з активним індуктивним елементом

Abstract

Disclosed is a magnet field sensor with an active inductance element in which in addition a two-gate MOS-transistor, a bipolar transistor, a third resistor and two capacitors are incorporated. As a two-drain magnetic sensitive MOS transistor a two-drain two-gate magnetic sensitive MOS transistor is used, the first and second gates of the two-drain two-gate magnetic sensitive MOS transistor are connected to the first terminals of first and second resistors respectively, the substrate of two-gate MOS-transistor is connected to the source thereof and the source of the two-drain two-gate magnetic sensitive MOS transistor, emitter of bipolar transistor and first terminal of first capacitor, which second terminal is connected to a base of bipolar transistor and first terminal of third resistor, which second terminal is connected to the collector of bipolar transistor, second terminal of first resistor, first terminal of second capacitor and first pole of DC source, the second drain of two-drain two-gate magnetic sensitive MOS transistor is connected to the second gate of two-gate MOS transistor, which drain is connected to the second terminals of second resistor and second capacitor and connected to a common bus, to which the second output terminal is connected.