Організація та структура матриць пам’яті на базі ХСН

Abstract

In this paper the problems of creating nonvolatile digital storage devices based on chalcogenide vitreous semiconductor are discussed. A structural scheme of two-dimensional and three-dimensional matrix of memory are offered. Advantages and disadvantages of each type of matrix are considered also. We describe three-dimensional matrix mode, which is recommended for use in real devices.