The UHF oscillators based on a HEMT structure with negative conductivity

Автор
Osadchuk, O. V.
Semenov, A. O.
Semenova, O. O.
Осадчук. О. В.
Семенов, А. О.
Семенова, О. О.
Дата
2015
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Анотації
The article considers a possibility of constructing microwave oscillators on a transistor structure with negative conductivity based on two HEМТ. Obtained non-linear equations can be used to model microwave oscillator parameters and characteristics with an error not more than 10%.
URI:
http://ir.lib.vntu.edu.ua/handle/123456789/14413
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