| dc.contributor.author | Osadchuk, O. V. | en |
| dc.contributor.author | Semenov, A. O. | en |
| dc.contributor.author | Semenova, O. O. | en |
| dc.contributor.author | Осадчук. О. В. | uk |
| dc.contributor.author | Семенов, А. О. | uk |
| dc.contributor.author | Семенова, О. О. | uk |
| dc.date.accessioned | 2017-02-26T21:43:32Z | |
| dc.date.available | 2017-02-26T21:43:32Z | |
| dc.date.issued | 2015 | |
| dc.identifier.citation | Osadchuk, O. V. The UHF oscillators based on a HEMT structure with negative conductivity [Electronic resource] / O. V. Osadchuk, A. O. Semenov, O. O. Semenova // Proceedings of the International Siberian Conference on Control and Communications (SIBCON), Russia, Omsk, May 21−23, 2015. – Omsk : Siberian Federal University. 2015. - Access mode : http://ieeexplore.ieee.org/document/7147168. | en |
| dc.identifier.isbn | 978-1-4799-7103-9/15 | |
| dc.identifier.uri | http://ir.lib.vntu.edu.ua/handle/123456789/14413 | |
| dc.description.abstract | The article considers a possibility of constructing microwave oscillators on a transistor structure with negative conductivity based on two HEМТ. Obtained non-linear equations
can be used to model microwave oscillator parameters and characteristics with an error not more than 10%. | en |
| dc.language.iso | en | en |
| dc.publisher | Томская группа и студенческое отделение Института инженеров по электротехнике и радиоэлектронике ;
Сибирский федеральный университет | ru |
| dc.relation.ispartof | Proceedings of the International Siberian Conference on Control and Communications (SIBCON), Russia, Omsk, May 21−23, 2015. | en |
| dc.subject | ocsilator | en |
| dc.subject | HEMT | en |
| dc.subject | negative conductivity | en |
| dc.subject | transistor structure | en |
| dc.title | The UHF oscillators based on a HEMT structure with negative conductivity | en |
| dc.type | Thesis | |
