Показати скорочену інформацію

dc.contributor.authorOsadchuk, O. V.en
dc.contributor.authorSemenov, A. O.en
dc.contributor.authorKoval, K. O.en
dc.contributor.authorPrutyla, M. O.en
dc.contributor.authorОсадчук, О. В.uk
dc.contributor.authorСеменов, А. О.uk
dc.contributor.authorКоваль, К. О.uk
dc.contributor.authorПритула, М. О.uk
dc.date.accessioned2017-03-15T22:18:53Z
dc.date.available2017-03-15T22:18:53Z
dc.date.issued2008
dc.identifier.citationMathematical model of transistor equivalent of electrical controlled capacity[Text] / O. Osadchuk, K. Koval, A. Semenov, M. Prutyla // Modern problems of Radio engineering, telecommunications and computer science : proceedings of the international conference, 19-23 february 2008. – Lviv-Slavsko, 2008. – P. 35–36.en
dc.identifier.isbn978-966-553-678-9
dc.identifier.urihttp://ir.lib.vntu.edu.ua/handle/123456789/14775
dc.description.abstractThis work the mathematical model of transistor equivalent of electrical controlled capacity based on two bipolar transistors are made. Associations of active and reactive component complete resistance with changeable temperature.en
dc.language.isoenen
dc.publisherНаціональний університет "Львівська політехніка"uk
dc.relation.ispartofModern problems of Radio engineering, telecommunications and computer science : proceedings of the international conference, 19-23 february 2008. : 35–36.en
dc.subjectnegative resistanceen
dc.subjectbipolar transistoren
dc.subjectmathematical modelen
dc.subjectcapacityen
dc.subjecttemperatureen
dc.titleMathematical model of transistor equivalent of electrical controlled capacityen
dc.typeThesis


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Показати скорочену інформацію