Теоретичні основи деформаційного ефекту в МДН-транзисторних структурах
Author
Осадчук, О. В.
Осадчук, Я. О.
Date
2013Metadata
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- Наукові роботи каф. ІРТС [779]
Abstract
The paper presents a mathematical model of deformation effects in MOS transistor that is used as an element in tenzosensitive of pressure transducer with a frequency output . On the basis of a mathematical model designed dependence of the threshold voltage, saturation voltage, gate-source voltage of the pressure action. Most dependence of these parameters on the pressure observed at work MOS transistor in saturation at high
pressures greater than 108 Pa.
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http://ir.lib.vntu.edu.ua/handle/123456789/8403