Microelectronic frequency transducers of the magnetic field based on semiconductor structures with negative differential resistance

Abstract

The work presents the results of the investigation of the main characteristics of self-excited oscillators based on two transistor structures with negative resistance and their expediency for constructing the transducers of a magnetic field with a frequency output signal is shown. A study was made of the magnetoreactive effect of primary magnetically sensitive elements, i.e. the dependence of the impedances of magnetoresistors, magnetodiodes, bipolar and field transistors on the effect of a magnetic field, which is the basis for the creation of magnetic field transducers with frequency output. Schemes of microelectronic frequency transducers of magnetic field in a wide frequency range 103 to 107 Hz and sensitivity 102 Hz/mT to 104 Hz/mT are proposed.