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dc.contributor.authorOsadchuk, A. V.en
dc.contributor.authorOsadchuk, A. V.en
dc.contributor.authorOsadchuk, I. A.en
dc.contributor.authorОсадчук, О. В.uk
dc.contributor.authorОсадчук, В. С.uk
dc.contributor.authorОсадчук, І. А.uk
dc.date.accessioned2021-11-16T09:39:24Z
dc.date.available2021-11-16T09:39:24Z
dc.date.issued2019
dc.identifier.citationOsadchuk A. V. Microelectronic frequency transducers of the magnetic field based on semiconductor structures with negative differential resistance [Text] / A. V. Osadchuk, V. S. Osadchuk, I. A. Osadchuk // The Pontial of Modern Sciense : coll. monograph. – London, United Kingdom, 2019. – Vol. 3. – P. 212-237.en
dc.identifier.isbn978-1-9993071-3-4
dc.identifier.urihttp://ir.lib.vntu.edu.ua//handle/123456789/34068
dc.description.abstractThe work presents the results of the investigation of the main characteristics of self-excited oscillators based on two transistor structures with negative resistance and their expediency for constructing the transducers of a magnetic field with a frequency output signal is shown. A study was made of the magnetoreactive effect of primary magnetically sensitive elements, i.e. the dependence of the impedances of magnetoresistors, magnetodiodes, bipolar and field transistors on the effect of a magnetic field, which is the basis for the creation of magnetic field transducers with frequency output. Schemes of microelectronic frequency transducers of magnetic field in a wide frequency range 103 to 107 Hz and sensitivity 102 Hz/mT to 104 Hz/mT are proposed.en
dc.language.isoenen
dc.publisherPublished by Science Publishingen
dc.relation.ispartofThe Pontial of Modern Sciense. Vol. 3 : 212-237.en
dc.subjectfrequency transduceren
dc.subjectmagnetic fielden
dc.subjectnegative resistanceen
dc.subjectmagnetically reactive effecten
dc.titleMicroelectronic frequency transducers of the magnetic field based on semiconductor structures with negative differential resistanceen
dc.typeMonograph


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