dc.contributor.author | Osadchuk, A. V. | en |
dc.contributor.author | Osadchuk, A. V. | en |
dc.contributor.author | Osadchuk, I. A. | en |
dc.contributor.author | Осадчук, О. В. | uk |
dc.contributor.author | Осадчук, В. С. | uk |
dc.contributor.author | Осадчук, І. А. | uk |
dc.date.accessioned | 2021-11-16T09:39:24Z | |
dc.date.available | 2021-11-16T09:39:24Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | Osadchuk A. V. Microelectronic frequency transducers of the magnetic field based on semiconductor structures with negative differential resistance [Text] / A. V. Osadchuk, V. S. Osadchuk, I. A. Osadchuk // The Pontial of Modern Sciense : coll. monograph. – London, United Kingdom, 2019. – Vol. 3. – P. 212-237. | en |
dc.identifier.isbn | 978-1-9993071-3-4 | |
dc.identifier.uri | http://ir.lib.vntu.edu.ua//handle/123456789/34068 | |
dc.description.abstract | The work presents the results of the investigation of the main characteristics of self-excited oscillators based on two transistor structures with negative resistance and their expediency for constructing the transducers of a magnetic field with a frequency output signal is shown. A study was made of the magnetoreactive effect of primary magnetically sensitive elements, i.e. the dependence of the impedances of magnetoresistors, magnetodiodes, bipolar and field transistors on the effect of a magnetic field, which is the basis for the creation of magnetic field transducers with frequency output. Schemes of microelectronic frequency transducers of magnetic field in a wide frequency range 103 to 107 Hz and sensitivity 102 Hz/mT to 104 Hz/mT are proposed. | en |
dc.language.iso | en | en |
dc.publisher | Published by Science Publishing | en |
dc.relation.ispartof | The Pontial of Modern Sciense. Vol. 3 : 212-237. | en |
dc.subject | frequency transducer | en |
dc.subject | magnetic field | en |
dc.subject | negative resistance | en |
dc.subject | magnetically reactive effect | en |
dc.title | Microelectronic frequency transducers of the magnetic field based on semiconductor structures with negative differential resistance | en |
dc.type | Monograph | |