Теоретичні основи деформаційного ефекту в МДН-транзисторних структурах

Abstract

The paper presents a mathematical model of deformation effects in MOS transistor that is used as an element in tenzosensitive of pressure transducer with a frequency output . On the basis of a mathematical model designed dependence of the threshold voltage, saturation voltage, gate-source voltage of the pressure action. Most dependence of these parameters on the pressure observed at work MOS transistor in saturation at high pressures greater than 108 Pa.