Physical Parameters of the Synthesized Semiconductor Material Based on a Heterometallic Complex Compound of Copper (II) with N, N'- Bis(Salicylidene)Semicarbazide

Abstract

A new stuff, heterometallic barium di[N,N'-bis(salicylidene)thiosemicarbazidatocuprate (II)] monohydrate(I) with such composition Ba[CuL']·Н2О, where H3L = N, N'-bis(salicylidene)thiosemicarbazide, has been synthesized. Investigations of electrical conductive properties for the compound I as compressed cylindrical specimen showed that its specific resistance was 6·1012 Ohm·cm at 313 K temperature, and there was a rectilinear relationship between the specific resistance and the temperature at the temperature rising from 313 K to 413 K, which was typical for semiconductor materials. Calculated at 333 K values of a temperature coefficient of resistance (TCR) for compound I (-11.39% K-1) and sensitivity (B) of the semiconductor stuff (12630 K) confirm that this compound is a semiconductor of medium sensitivity in the 313~413 K operating temperature range.