Mathematical simulation of a microelectronic transducer with frequency output for measuring the induction of the magnetic field

Abstract

A new magnetically sensitive element based on the synthesized semiconductor material has been developed. A method for the synthesis of a complex compound has been developed tetrakis-μ3-(methoxo) (methanol)-pentakis (acetylacetonate) (tricuprum (II), neodymium (III)) methanol (I). Conducted properties have been studied complex compound in compressed form in the temperature range 273 - 493 K. In the developed magnetoresistor when changing the induction of the magnetic field 10-3 to 200 mT, the resistivity varies 3.12∙10-5 Ohm to 1.25∙10-2 Ohm∙m. On the basis of the developed magnetically sensitive resistive element the circuit solution of the frequency transducer of a magnetic field is offered. The frequency transducer of the magnetic field is a hybrid integrated circuit consisting of a bipolar transistor and a gate transistor. The frequency of generation of the developed transducer increases the most in the range 10-3 T to 0.2 T, and at a supply voltage of 5.0 V varies 250 kHz to 600 kHz, and in the whole range of changes in magnetic field induction varies 250 kHz to 750 kHz. The sensitivity of the developed device with frequency output for measuring the induction of the magnetic field is 400 Hz/mT to 800 Hz/mT.